EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
GaN |
Configuration
|
Single Dual Drain Dual Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
100 |
Maximum Gate Source Voltage (V)
|
6 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Maximum Continuous Drain Current (A)
|
18 |
Maximum Gate Source Leakage Current (nA)
|
3000000 |
Maximum IDSS (uA)
|
150 |
Maximum Drain Source Resistance (mOhm)
|
16@5V |
Typical Gate Charge @ Vgs (nC)
|
3.4 |
Typical Input Capacitance @ Vds (pF)
|
360@50V |
Operating Temperature-Min
|
-40 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
Die |
Pin Count
|
6 |
Terminal Form
|
Surface Mount |
Package Height
|
0.69 |
Package Length
|
2.11 |
Package Width
|
1.63 |