EPC2111

SKU: 51721

Manufacturer: Efficient Power Conversion Corporation

Trans MOSFET N-CH GaN 30V 16A BGA

2970 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Product Category	Power MOSFET
Body Material	GaN
Configuration	Dual
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	6
Maximum Gate Threshold Voltage (V)	2.5
Maximum Continuous Drain Current (A)	16
Maximum Gate Source Leakage Current (nA)	4500000@Q 2
Maximum IDSS (uA)	150@Q 1
Maximum Drain Source Resistance (mOhm)	19@5V@Q 1
Typical Gate Charge @ Vgs (nC)	4.4@5V@Q 2
Typical Input Capacitance @ Vds (pF)	490@15V@Q 2
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	BGA

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Product Category	Power MOSFET
Body Material	GaN
Configuration	Dual
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	6
Maximum Gate Threshold Voltage (V)	2.5
Maximum Continuous Drain Current (A)	16
Maximum Gate Source Leakage Current (nA)	4500000@Q 2
Maximum IDSS (uA)	150@Q 1
Maximum Drain Source Resistance (mOhm)	19@5V@Q 1
Typical Gate Charge @ Vgs (nC)	4.4@5V@Q 2
Typical Input Capacitance @ Vds (pF)	490@15V@Q 2
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	BGA