|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
GaN |
|
Configuration
|
Single Dual Drain |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
40 |
|
Maximum Gate Source Voltage (V)
|
6 |
|
Maximum Gate Threshold Voltage (V)
|
2.5 |
|
Operating Junction Temperature (°C)
|
-40 to 150 |
|
Maximum Continuous Drain Current (A)
|
10 |
|
Maximum Gate Source Leakage Current (nA)
|
100000 |
|
Maximum IDSS (uA)
|
100 |
|
Maximum Drain Source Resistance (mOhm)
|
16@5V |
|
Typical Gate Charge @ Vgs (nC)
|
2@5V |
|
Typical Gate to Drain Charge (nC)
|
0.3 |
|
Typical Gate to Source Charge (nC)
|
0.7 |
|
Typical Reverse Recovery Charge (nC)
|
0 |
|
Typical Input Capacitance @ Vds (pF)
|
220@20V |
|
Typical Reverse Transfer Capacitance @ Vds (pF)
|
6.5@20V |
|
Minimum Gate Threshold Voltage (V)
|
0.8 |
|
Typical Output Capacitance (pF)
|
150 |
|
Operating Temperature-Min
|
-40 |
|
Operating Temperature-Max
|
150 |
|
Maximum Positive Gate Source Voltage (V)
|
6 |
|
Maximum Pulsed Drain Current @ TC=25°C (A)
|
60 |
|
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
80 |
|
Typical Gate Plateau Voltage (V)
|
2.5 |
|
Typical Gate Threshold Voltage (V)
|
1.4 |
|
Original Package
|
Die |
|
Pin Count
|
5 |
|
Standard Package Method
|
Die |
|
Package Height
|
0.69 |
|
Package Length
|
1.7 |
|
Package Width
|
1.09 |