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    SI7998DP-T1-GE3

    SKU: 21328
    Manufacturer: Vishay
    Trans MOSFET N-CH 30V 15A/21A 8-Pin PowerPAK SO T/R
    2250 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 15@Channel 1
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 9.3@10V@Channel 1
    Typical Gate Charge @ Vgs (nC) 17@10V
    Typical Gate Charge @ 10V (nC) 32@Channel 2
    Typical Gate to Drain Charge (nC) 4.7@Channel 2
    Typical Gate to Source Charge (nC) 6.3@Channel 2
    Typical Reverse Recovery Charge (nC) 22@Channel 2
    Typical Input Capacitance @ Vds (pF) 1100@15V@Channel 1
    Typical Reverse Transfer Capacitance @ Vds (pF) 160@15v@Channel 2
    Minimum Gate Threshold Voltage (V) 1.2
    Typical Output Capacitance (pF) 390@Channel 2
    Maximum Power Dissipation (mW) 4000@Channel 2
    Typical Fall Time (ns) 10@Channel 1
    Typical Rise Time (ns) 17@Channel 2
    Typical Turn-Off Delay Time (ns) 35@Channel 2
    Typical Turn-On Delay Time (ns) 26@Channel 2
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 4000@Channel 2
    Maximum Pulsed Drain Current @ TC=25°C (A) 80@Channel 2
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 31@Channel 2
    Typical Diode Forward Voltage (V) 0.8
    Typical Gate Plateau Voltage (V) 3.2@Channel 2
    Typical Reverse Recovery Time (ns) 27@Channel 2
    Maximum Diode Forward Voltage (V) 1.2
    Maximum Gate Resistance (Ohm) 7
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 21@Channel 2
    Original Package PowerPAK SO
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.07(Max)
    Package Length 4.9
    Package Width 5.89
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 15@Channel 1
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 9.3@10V@Channel 1
    Typical Gate Charge @ Vgs (nC) 17@10V
    Typical Gate Charge @ 10V (nC) 32@Channel 2
    Typical Gate to Drain Charge (nC) 4.7@Channel 2
    Typical Gate to Source Charge (nC) 6.3@Channel 2
    Typical Reverse Recovery Charge (nC) 22@Channel 2
    Typical Input Capacitance @ Vds (pF) 1100@15V@Channel 1
    Typical Reverse Transfer Capacitance @ Vds (pF) 160@15v@Channel 2
    Minimum Gate Threshold Voltage (V) 1.2
    Typical Output Capacitance (pF) 390@Channel 2
    Maximum Power Dissipation (mW) 4000@Channel 2
    Typical Fall Time (ns) 10@Channel 1
    Typical Rise Time (ns) 17@Channel 2
    Typical Turn-Off Delay Time (ns) 35@Channel 2
    Typical Turn-On Delay Time (ns) 26@Channel 2
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 4000@Channel 2
    Maximum Pulsed Drain Current @ TC=25°C (A) 80@Channel 2
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 31@Channel 2
    Typical Diode Forward Voltage (V) 0.8
    Typical Gate Plateau Voltage (V) 3.2@Channel 2
    Typical Reverse Recovery Time (ns) 27@Channel 2
    Maximum Diode Forward Voltage (V) 1.2
    Maximum Gate Resistance (Ohm) 7
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 21@Channel 2
    Original Package PowerPAK SO
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.07(Max)
    Package Length 4.9
    Package Width 5.89
    PCB changed 8