SI4501BDY-T1-GE3

SKU: 14312

Manufacturer: Vishay

Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R

3780 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Common Quad Drain
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	8@P Channel
Maximum Gate Source Voltage (V)	±8@P Channel
Maximum Gate Threshold Voltage (V)	0.9@P Channel
Maximum Continuous Drain Current (A)	6.4@P Channel
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	27@10V@P Channel
Typical Gate Charge @ Vgs (nC)	16.5@4.5V@P Channel
Typical Gate Charge @ 10V (nC)	16.5@N Channel
Typical Input Capacitance @ Vds (pF)	1400@4V@P Channel
Maximum Power Dissipation (mW)	2000@P Channel
Typical Fall Time (ns)	14@P Channel
Typical Rise Time (ns)	18@P Channel
Typical Turn-Off Delay Time (ns)	34@P Channel
Typical Turn-On Delay Time (ns)	22@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.55(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Common Quad Drain
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	8@P Channel
Maximum Gate Source Voltage (V)	±8@P Channel
Maximum Gate Threshold Voltage (V)	0.9@P Channel
Maximum Continuous Drain Current (A)	6.4@P Channel
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	27@10V@P Channel
Typical Gate Charge @ Vgs (nC)	16.5@4.5V@P Channel
Typical Gate Charge @ 10V (nC)	16.5@N Channel
Typical Input Capacitance @ Vds (pF)	1400@4V@P Channel
Maximum Power Dissipation (mW)	2000@P Channel
Typical Fall Time (ns)	14@P Channel
Typical Rise Time (ns)	18@P Channel
Typical Turn-Off Delay Time (ns)	34@P Channel
Typical Turn-On Delay Time (ns)	22@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.55(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8