EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Dual Common Quad Drain |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
30@N Channel |
Maximum Gate Source Voltage (V)
|
±20@N Channel |
Maximum Continuous Drain Current (A)
|
4.1@P Channel |
Maximum Drain Source Resistance (mOhm)
|
18@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
13.5@5V@P Channel |
Maximum Power Dissipation (mW)
|
2500 |
Typical Fall Time (ns)
|
10@N Channel |
Typical Rise Time (ns)
|
8@N Channel |
Typical Turn-Off Delay Time (ns)
|
35@N Channel |
Typical Turn-On Delay Time (ns)
|
15@N Channel |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
SOIC N |
Pin Count
|
8 |
Standard Package Method
|
SOP |
Terminal Form
|
Surface Mount |
Package Height
|
1.55(Max) |
Package Length
|
5(Max) |
Package Width
|
4(Max) |
PCB changed
|
8 |