EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Dual Source |
Process Technology
|
MDmesh |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
650 |
Maximum Gate Source Voltage (V)
|
±25 |
Maximum Gate Threshold Voltage (V)
|
5 |
Maximum Continuous Drain Current (A)
|
58 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
45@10V |
Typical Gate Charge @ Vgs (nC)
|
143@10V |
Typical Gate Charge @ 10V (nC)
|
143 |
Typical Input Capacitance @ Vds (pF)
|
6420@100V |
Maximum Power Dissipation (mW)
|
330000 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tube |
Original Package
|
TO-247 |
Pin Count
|
4 |
Standard Package Method
|
TO-247 |
Terminal Form
|
Through Hole |
Package Height
|
21 |
Package Length
|
15.8 |
Package Width
|
5 |
PCB changed
|
4 |
Tab
|
Tab |