EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
SiC |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
1200 |
Maximum Gate Source Voltage (V)
|
25 |
Maximum Gate Threshold Voltage (V)
|
3.5(Typ) |
Operating Junction Temperature (°C)
|
-55 to 200 |
Maximum Continuous Drain Current (A)
|
20 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
100 |
Maximum Drain Source Resistance (mOhm)
|
239@20V |
Typical Gate Charge @ Vgs (nC)
|
45@20V |
Typical Input Capacitance @ Vds (pF)
|
650@400V |
Maximum Power Dissipation (mW)
|
175000 |
Typical Fall Time (ns)
|
17 |
Typical Rise Time (ns)
|
16 |
Typical Turn-Off Delay Time (ns)
|
27 |
Typical Turn-On Delay Time (ns)
|
10 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
200 |
Packing Method
|
Tube |
Original Package
|
HIP-247 |
Pin Count
|
3 |
Standard Package Method
|
HIP-247 |
Terminal Form
|
Through Hole |
Package Height
|
20.15(Max) |
Package Length
|
15.75(Max) |
Package Width
|
5.15(Max) |
PCB changed
|
3 |