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    FQA11N90C-F109

    SKU: 11748
    Manufacturer: onsemi
    Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P Tube
    750 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology DMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 900
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 11
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 1400@10V
    Typical Gate Charge @ Vgs (nC) 60@10V
    Typical Gate Charge @ 10V (nC) 60
    Typical Input Capacitance @ Vds (pF) 2530@25V
    Maximum Power Dissipation (mW) 300000
    Typical Fall Time (ns) 85
    Typical Rise Time (ns) 130
    Typical Turn-Off Delay Time (ns) 130
    Typical Turn-On Delay Time (ns) 60
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-3P
    Pin Count 3
    Standard Package Method TO-3P
    Terminal Form Through Hole
    Package Height 18.9(Max)
    Package Length 16.2(Max)
    Package Width 5(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology DMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 900
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 11
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 1400@10V
    Typical Gate Charge @ Vgs (nC) 60@10V
    Typical Gate Charge @ 10V (nC) 60
    Typical Input Capacitance @ Vds (pF) 2530@25V
    Maximum Power Dissipation (mW) 300000
    Typical Fall Time (ns) 85
    Typical Rise Time (ns) 130
    Typical Turn-Off Delay Time (ns) 130
    Typical Turn-On Delay Time (ns) 60
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-3P
    Pin Count 3
    Standard Package Method TO-3P
    Terminal Form Through Hole
    Package Height 18.9(Max)
    Package Length 16.2(Max)
    Package Width 5(Max)
    PCB changed 3
    Tab Tab