EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
DMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
900 |
Maximum Gate Source Voltage (V)
|
±30 |
Maximum Gate Threshold Voltage (V)
|
5 |
Maximum Continuous Drain Current (A)
|
11 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
10 |
Maximum Drain Source Resistance (mOhm)
|
1400@10V |
Typical Gate Charge @ Vgs (nC)
|
60@10V |
Typical Gate Charge @ 10V (nC)
|
60 |
Typical Input Capacitance @ Vds (pF)
|
2530@25V |
Maximum Power Dissipation (mW)
|
300000 |
Typical Fall Time (ns)
|
85 |
Typical Rise Time (ns)
|
130 |
Typical Turn-Off Delay Time (ns)
|
130 |
Typical Turn-On Delay Time (ns)
|
60 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
TO-3PN |
Pin Count
|
3 |
Standard Package Method
|
TO-3P |
Terminal Form
|
Through Hole |
Package Height
|
18.9(Max) |
Package Length
|
16.2(Max) |
Package Width
|
5(Max) |
PCB changed
|
3 |
Tab
|
Tab |