|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Unconfirmed |
|
SVHC
|
Yes |
|
Automotive
|
Yes |
|
PPAP
|
Unknown |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Dual Drain |
|
Process Technology
|
TMOS |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
100 |
|
Maximum Gate Source Voltage (V)
|
10 |
|
Maximum Continuous Drain Current (A)
|
4.6 |
|
Maximum Drain Source Resistance (mOhm)
|
173@10V |
|
Typical Input Capacitance @ Vds (pF)
|
464@25V |
|
Maximum Power Dissipation (mW)
|
8000 |
|
Typical Fall Time (ns)
|
25 |
|
Typical Rise Time (ns)
|
89 |
|
Typical Turn-Off Delay Time (ns)
|
18 |
|
Typical Turn-On Delay Time (ns)
|
7 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Supplier Temperature Grade
|
Automotive |