|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.29.00.95 |
|
SVHC
|
Yes |
|
Automotive
|
Yes |
|
PPAP
|
Unknown |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Dual Drain |
|
Process Technology
|
TMOS |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
55 |
|
Maximum Gate Source Voltage (V)
|
±15 |
|
Maximum Gate Threshold Voltage (V)
|
2 |
|
Operating Junction Temperature (°C)
|
-55 to 150 |
|
Maximum Continuous Drain Current (A)
|
5.5 |
|
Maximum Gate Source Leakage Current (nA)
|
100 |
|
Maximum IDSS (uA)
|
10 |
|
Maximum Drain Source Resistance (mOhm)
|
137@10V |
|
Typical Gate Charge @ Vgs (nC)
|
5.3@5V |
|
Typical Gate to Drain Charge (nC)
|
2.8 |
|
Typical Gate to Source Charge (nC)
|
1 |
|
Typical Reverse Recovery Charge (nC)
|
30 |
|
Typical Input Capacitance @ Vds (pF)
|
240@25V |
|
Typical Reverse Transfer Capacitance @ Vds (pF)
|
40@25V |
|
Minimum Gate Threshold Voltage (V)
|
1 |
|
Typical Output Capacitance (pF)
|
53 |
|
Maximum Power Dissipation (mW)
|
8000 |
|
Typical Fall Time (ns)
|
13 |
|
Typical Rise Time (ns)
|
57 |
|
Typical Turn-Off Delay Time (ns)
|
16 |
|
Typical Turn-On Delay Time (ns)
|
8 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Supplier Temperature Grade
|
Automotive |
|
Packing Method
|
Tape and Reel |
|
Maximum Pulsed Drain Current @ TC=25°C (A)
|
22 |
|
Typical Diode Forward Voltage (V)
|
0.85 |
|
Typical Gate Plateau Voltage (V)
|
3.2 |
|
Typical Reverse Recovery Time (ns)
|
24 |
|
Maximum Diode Forward Voltage (V)
|
1.2 |
|
Typical Gate Threshold Voltage (V)
|
1.5 |
|
Maximum Positive Gate Source Voltage (V)
|
15 |
|
Pin Count
|
4 |
|
Standard Package Method
|
SC |
|
Original Package
|
SC-73 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
1.7(Max) |
|
Package Length
|
6.7(Max) |
|
Package Width
|
3.7(Max) |
|
PCB changed
|
3 |
|
Tab
|
Tab |