EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Single Dual Drain |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
55 |
Maximum Gate Source Voltage (V)
|
±15 |
Maximum Gate Threshold Voltage (V)
|
2 |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
5.5 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
10 |
Maximum Drain Source Resistance (mOhm)
|
137@10V |
Typical Gate Charge @ Vgs (nC)
|
5.3@5V |
Typical Gate to Drain Charge (nC)
|
2.8 |
Typical Gate to Source Charge (nC)
|
1 |
Typical Reverse Recovery Charge (nC)
|
30 |
Typical Input Capacitance @ Vds (pF)
|
240@25V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
40@25V |
Minimum Gate Threshold Voltage (V)
|
1 |
Typical Output Capacitance (pF)
|
53 |
Maximum Power Dissipation (mW)
|
8000 |
Typical Fall Time (ns)
|
13 |
Typical Rise Time (ns)
|
57 |
Typical Turn-Off Delay Time (ns)
|
16 |
Typical Turn-On Delay Time (ns)
|
8 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Supplier Temperature Grade
|
Automotive |
Packing Method
|
Tape and Reel |
Maximum Pulsed Drain Current @ TC=25°C (A)
|
22 |
Typical Diode Forward Voltage (V)
|
0.85 |
Typical Gate Plateau Voltage (V)
|
3.2 |
Typical Reverse Recovery Time (ns)
|
24 |
Maximum Diode Forward Voltage (V)
|
1.2 |
Typical Gate Threshold Voltage (V)
|
1.5 |
Maximum Positive Gate Source Voltage (V)
|
15 |
Pin Count
|
4 |
Standard Package Method
|
SC |
Original Package
|
SC-73 |
Terminal Form
|
Surface Mount |
Package Height
|
1.7(Max) |
Package Length
|
6.7(Max) |
Package Width
|
3.7(Max) |
PCB changed
|
3 |
Tab
|
Tab |