JAN2N4957

SKU: 58893

Manufacturer: Microchip Technology

Trans RF BJT PNP 30V 0.03A 200mW Bag

3840 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.21.00.75
Automotive	No
PPAP	No
Type	PNP
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	30
Collector-Emitter Voltage-Max (V)	30
Collector-Emitter Voltage Range-Max (V)	30 to 40
Maximum Emitter Base Voltage (V)	3
Maximum DC Collector Current (A)	0.03
Maximum DC Collector Current Range (A)	0.001 to 0.06
Maximum Emitter Cut-Off Current (nA)	100000
Maximum Collector Cut-Off Current (nA)	100000
Operational Bias Conditions	10V/2mA
Minimum DC Current Gain	15@0.5mA@10V
Minimum DC Current Gain Range	2 to 30
Maximum Power Dissipation (mW)	200
Typical Power Gain (dB)	25
Maximum Noise Figure (dB)	3.5
Operating Temperature-Min	-65
Operating Temperature-Max	200
Supplier Temperature Grade	Military

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.21.00.75
Automotive	No
PPAP	No
Type	PNP
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	30
Collector-Emitter Voltage-Max (V)	30
Collector-Emitter Voltage Range-Max (V)	30 to 40
Maximum Emitter Base Voltage (V)	3
Maximum DC Collector Current (A)	0.03
Maximum DC Collector Current Range (A)	0.001 to 0.06
Maximum Emitter Cut-Off Current (nA)	100000
Maximum Collector Cut-Off Current (nA)	100000
Operational Bias Conditions	10V/2mA
Minimum DC Current Gain	15@0.5mA@10V
Minimum DC Current Gain Range	2 to 30
Maximum Power Dissipation (mW)	200
Typical Power Gain (dB)	25
Maximum Noise Figure (dB)	3.5
Operating Temperature-Min	-65
Operating Temperature-Max	200
Supplier Temperature Grade	Military