JANTX2N3866A

SKU: 150802

Manufacturer: Semicoa Semiconductors

NPN, silicon, high-frequency, encapsulated and uncapsulated, radiation hardness

780 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
Part Status	Active
Automotive	No
PPAP	No
Type	NPN
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	60
Collector-Emitter Voltage-Max (V)	30
Collector-Emitter Voltage Range-Max (V)	30 to 40
Maximum Collector-Emitter Saturation Voltage (V)	1@10mA@100mA
Maximum Emitter Base Voltage (V)	3.5
Maximum DC Collector Current (A)	0.4
Maximum DC Collector Current Range (A)	0.12 to 0.5
Minimum DC Current Gain	25@50mA@5V
Minimum DC Current Gain Range	2 to 30
Typical Input Capacitance (pF)	3.5(Max)
Maximum Power Dissipation (mW)	1000
Output Power (W)	2
Operating Temperature-Min	-65
Operating Temperature-Max	200
Supplier Temperature Grade	Military
Original Package	TO-39
Pin Count	3
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3

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Products specifications

EU RoHS	Not Compliant
Part Status	Active
Automotive	No
PPAP	No
Type	NPN
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	60
Collector-Emitter Voltage-Max (V)	30
Collector-Emitter Voltage Range-Max (V)	30 to 40
Maximum Collector-Emitter Saturation Voltage (V)	1@10mA@100mA
Maximum Emitter Base Voltage (V)	3.5
Maximum DC Collector Current (A)	0.4
Maximum DC Collector Current Range (A)	0.12 to 0.5
Minimum DC Current Gain	25@50mA@5V
Minimum DC Current Gain Range	2 to 30
Typical Input Capacitance (pF)	3.5(Max)
Maximum Power Dissipation (mW)	1000
Output Power (W)	2
Operating Temperature-Min	-65
Operating Temperature-Max	200
Supplier Temperature Grade	Military
Original Package	TO-39
Pin Count	3
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3