EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.21.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
VDMOS |
Channel Mode
|
Depletion |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
800 |
Maximum Gate Source Voltage (V)
|
±15 |
Operating Junction Temperature (°C)
|
125 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
20000(Min) |
Maximum Drain Source Resistance (mOhm)
|
380000@0V |
Typical Input Capacitance @ Vds (pF)
|
20@25V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
1.3@25V |
Typical Output Capacitance (pF)
|
2.2 |
Maximum Power Dissipation (mW)
|
400 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
110 |
Packing Method
|
Tape and Reel |
Maximum Positive Gate Source Voltage (V)
|
15 |
Maximum Power Dissipation on PCB @ TC=25°C (W)
|
0.4 |
Maximum Pulsed Drain Current @ TC=25°C (A)
|
0.15 |
Typical Diode Forward Voltage (V)
|
0.6 |
Maximum Diode Forward Voltage (V)
|
1 |
Original Package
|
SOT-23 |
Pin Count
|
3 |
Standard Package Method
|
SOT |
Terminal Form
|
Surface Mount |
Package Height
|
0.94 |
Package Length
|
2.92 |
Package Width
|
1.3 |
PCB changed
|
3 |