EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Dual Source |
Process Technology
|
HiperFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
100 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
295 |
Maximum Drain Source Resistance (mOhm)
|
5.5@10V |
Typical Gate Charge @ Vgs (nC)
|
279@10V |
Typical Gate Charge @ 10V (nC)
|
279 |
Typical Input Capacitance @ Vds (pF)
|
23000@25V |
Maximum Power Dissipation (mW)
|
1070000 |
Typical Fall Time (ns)
|
25 |
Typical Rise Time (ns)
|
35 |
Typical Turn-Off Delay Time (ns)
|
56 |
Typical Turn-On Delay Time (ns)
|
36 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Original Package
|
SOT-227B |
Pin Count
|
4 |
Standard Package Method
|
SOT |
Terminal Form
|
Screw |
Package Height
|
9.6(Max) |
Package Length
|
38.23(Max) |
Package Width
|
25.42(Max) |
PCB changed
|
4 |