EU RoHS
|
Compliant with Exemption |
Part Status
|
NRND |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Process Technology
|
HiperFET |
Configuration
|
Single Dual Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
1200 |
Maximum Gate Source Voltage (V)
|
±30 |
Maximum Continuous Drain Current (A)
|
32 |
Maximum Drain Source Resistance (mOhm)
|
350@10V |
Typical Gate Charge @ Vgs (nC)
|
400@10V |
Typical Gate Charge @ 10V (nC)
|
400 |
Typical Input Capacitance @ Vds (pF)
|
15900@25V |
Maximum Power Dissipation (mW)
|
780000 |
Typical Fall Time (ns)
|
22 |
Typical Rise Time (ns)
|
42 |
Typical Turn-Off Delay Time (ns)
|
98 |
Typical Turn-On Delay Time (ns)
|
36 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
SOT-227B |
Pin Count
|
4 |
Terminal Form
|
Screw |
Package Length
|
38.23(Max) |
Package Width
|
25.42(Max) |