SD5443-004

SKU: 158363

Manufacturer: Honeywell

Phototransistor IR Chip Silicon 3-Pin TO-46

1530 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.40.70.80
Automotive	No
PPAP	No
Type	IR Chip
Phototransistor Type	Phototransistor
Lens Shape Type	Domed
Body Material	Silicon
Number of Channels per Chip	1
Polarity	NPN
Half Intensity Angle Degrees (°)	18
Viewing Orientation	Top View
Maximum Rise Time (ns)	15000(Typ)
Maximum Fall Time (ns)	15000(Typ)
Maximum Light Current (uA)	16000(Min)
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	5
Collector-Emitter Voltage-Max (V)	30
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Power Dissipation (mW)	150
Fabrication Technology	NPN Transistor
Operating Temperature-Min	-55
Operating Temperature-Max	125
Standard Package Method	TO-206-AB
Original Package	TO-46
Pin Count	3
Diameter	5.56(Max)
Terminal Form	Through Hole
Package Height	6.27(Max)
PCB changed	3

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.40.70.80
Automotive	No
PPAP	No
Type	IR Chip
Phototransistor Type	Phototransistor
Lens Shape Type	Domed
Body Material	Silicon
Number of Channels per Chip	1
Polarity	NPN
Half Intensity Angle Degrees (°)	18
Viewing Orientation	Top View
Maximum Rise Time (ns)	15000(Typ)
Maximum Fall Time (ns)	15000(Typ)
Maximum Light Current (uA)	16000(Min)
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	5
Collector-Emitter Voltage-Max (V)	30
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Power Dissipation (mW)	150
Fabrication Technology	NPN Transistor
Operating Temperature-Min	-55
Operating Temperature-Max	125
Standard Package Method	TO-206-AB
Original Package	TO-46
Pin Count	3
Diameter	5.56(Max)
Terminal Form	Through Hole
Package Height	6.27(Max)
PCB changed	3