EPC2012C

SKU: 79782

Manufacturer: Efficient Power Conversion Corporation

Trans MOSFET N-CH GaN 200V 5A Automotive 4-Pin Die T/R

1240 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	GaN
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	6
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-40 to 150
Maximum Continuous Drain Current (A)	5
Maximum Gate Source Leakage Current (nA)	50000
Maximum IDSS (uA)	50
Maximum Drain Source Resistance (mOhm)	100@5V
Typical Gate Charge @ Vgs (nC)	1@5V
Typical Gate to Drain Charge (nC)	0.2
Typical Gate to Source Charge (nC)	0.3
Typical Reverse Recovery Charge (nC)	0
Typical Input Capacitance @ Vds (pF)	100@100V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.4@100V
Minimum Gate Threshold Voltage (V)	0.8
Typical Output Capacitance (pF)	64
Operating Temperature-Min	-40
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	6
Maximum Pulsed Drain Current @ TC=25°C (A)	22
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	85
Typical Gate Plateau Voltage (V)	2.3
Typical Gate Threshold Voltage (V)	1.4
Original Package	Die
Pin Count	4
Standard Package Method	Die
Terminal Form	Surface Mount
Package Height	0.69
Package Length	1.71
Package Width	0.92

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	GaN
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	6
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-40 to 150
Maximum Continuous Drain Current (A)	5
Maximum Gate Source Leakage Current (nA)	50000
Maximum IDSS (uA)	50
Maximum Drain Source Resistance (mOhm)	100@5V
Typical Gate Charge @ Vgs (nC)	1@5V
Typical Gate to Drain Charge (nC)	0.2
Typical Gate to Source Charge (nC)	0.3
Typical Reverse Recovery Charge (nC)	0
Typical Input Capacitance @ Vds (pF)	100@100V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.4@100V
Minimum Gate Threshold Voltage (V)	0.8
Typical Output Capacitance (pF)	64
Operating Temperature-Min	-40
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	6
Maximum Pulsed Drain Current @ TC=25°C (A)	22
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	85
Typical Gate Plateau Voltage (V)	2.3
Typical Gate Threshold Voltage (V)	1.4
Original Package	Die
Pin Count	4
Standard Package Method	Die
Terminal Form	Surface Mount
Package Height	0.69
Package Length	1.71
Package Width	0.92