BLC9G20LS-361AVT

SKU: 25150

Manufacturer: Ampleon

Trans RF FET N-CH 65V

3230 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Configuration	Dual Common Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.5
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	198@6.25V
Typical Forward Transconductance (S)	1.27
Output Power (W)	360
Typical Power Gain (dB)	15.7
Maximum Frequency (MHz)	1990
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	47.5
Operating Temperature-Min	-65

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Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Configuration	Dual Common Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.5
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	198@6.25V
Typical Forward Transconductance (S)	1.27
Output Power (W)	360
Typical Power Gain (dB)	15.7
Maximum Frequency (MHz)	1990
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	47.5
Operating Temperature-Min	-65