|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Automotive
|
Unknown |
|
PPAP
|
Unknown |
|
Configuration
|
Dual Common Source |
|
Type
|
MOSFET |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
2 |
|
Mode of Operation
|
1-Carrier W-CDMA |
|
Process Technology
|
LDMOS |
|
Maximum Drain Source Voltage (V)
|
65 |
|
Maximum Gate Source Voltage (V)
|
13 |
|
Maximum Gate Threshold Voltage (V)
|
2.5 |
|
Maximum VSWR
|
10 |
|
Maximum Gate Source Leakage Current (nA)
|
280 |
|
Maximum IDSS (uA)
|
2.8 |
|
Maximum Drain Source Resistance (mOhm)
|
170@4.87V |
|
Typical Forward Transconductance (S)
|
23 |
|
Output Power (W)
|
50(Typ) |
|
Typical Power Gain (dB)
|
15.4 |
|
Maximum Frequency (MHz)
|
2700 |
|
Minimum Frequency (MHz)
|
2500 |
|
Typical Drain Efficiency (%)
|
42 |
|
Operating Temperature-Min
|
-65 |
|
Operating Temperature-Max
|
225 |
|
Original Package
|
DFM |
|
Pin Count
|
7 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
4.65(Max) |
|
Package Length
|
32.33(Max) |
|
Package Width
|
10.23(Max) |