ECCN (US)
|
EAR99 |
Part Status
|
Active |
Automotive
|
Unknown |
PPAP
|
Unknown |
Configuration
|
Dual Common Source |
Type
|
MOSFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Mode of Operation
|
1-Carrier W-CDMA |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
65 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Maximum VSWR
|
10 |
Maximum Gate Source Leakage Current (nA)
|
280 |
Maximum IDSS (uA)
|
2.8 |
Maximum Drain Source Resistance (mOhm)
|
170@4.87V |
Typical Forward Transconductance (S)
|
23 |
Output Power (W)
|
50(Typ) |
Typical Power Gain (dB)
|
15.4 |
Maximum Frequency (MHz)
|
2700 |
Minimum Frequency (MHz)
|
2500 |
Typical Drain Efficiency (%)
|
42 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
225 |
Original Package
|
DFM |
Pin Count
|
7 |
Terminal Form
|
Surface Mount |
Package Height
|
4.65(Max) |
Package Length
|
32.33(Max) |
Package Width
|
10.23(Max) |