EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
HTS
|
8541.10.00.80 |
Automotive
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Dual |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
3 |
Maximum Continuous Drain Current (A)
|
3.5@N Channel |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
50@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
4.05@10V |
Typical Gate Charge @ 10V (nC)
|
4.05@N Channel |
Typical Input Capacitance @ Vds (pF)
|
170@15V@N Channel |
Maximum Power Dissipation (mW)
|
1150 |
Typical Fall Time (ns)
|
15.5@N Channel |
Typical Rise Time (ns)
|
1.5@N Channel |
Typical Turn-Off Delay Time (ns)
|
18.5@N Channel |
Typical Turn-On Delay Time (ns)
|
4.5@N Channel |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
TSOP |
Pin Count
|
6 |
Standard Package Method
|
SOP |
Terminal Form
|
Surface Mount |
Package Height
|
1.1 |
Package Length
|
2.9 |
Package Width
|
1.6 |