EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Dual |
Process Technology
|
TrenchFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
20 |
Maximum Gate Source Voltage (V)
|
±16 |
Maximum Gate Threshold Voltage (V)
|
2.2 |
Maximum Continuous Drain Current (A)
|
13.1@Channel 1 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
8.6@10V@Channel 1 |
Typical Gate Charge @ Vgs (nC)
|
20@10V |
Typical Gate Charge @ 10V (nC)
|
55@Channel 2 |
Typical Input Capacitance @ Vds (pF)
|
1300@10V@Channel 1 |
Maximum Power Dissipation (mW)
|
1400@Channel 1 |
Typical Fall Time (ns)
|
10@Channel 2 |
Typical Rise Time (ns)
|
8 |
Typical Turn-Off Delay Time (ns)
|
25@Channel 1 |
Typical Turn-On Delay Time (ns)
|
9 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
PowerPAIR |
Pin Count
|
6 |
Terminal Form
|
Surface Mount |
Package Height
|
0.55 |
Package Length
|
6 |
Package Width
|
3.73 |