EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Quad Drain Triple Source |
Process Technology
|
TrenchFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
3.6 |
Maximum Continuous Drain Current (A)
|
117 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
2.8@10V |
Typical Gate Charge @ Vgs (nC)
|
42.2@10V |
Typical Gate Charge @ 10V (nC)
|
42.2 |
Typical Gate to Drain Charge (nC)
|
6.7 |
Typical Gate to Source Charge (nC)
|
12.2 |
Typical Reverse Recovery Charge (nC)
|
71 |
Typical Input Capacitance @ Vds (pF)
|
3250@30V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
50@30V |
Minimum Gate Threshold Voltage (V)
|
2 |
Typical Output Capacitance (pF)
|
840 |
Maximum Power Dissipation (mW)
|
5000 |
Typical Fall Time (ns)
|
10 |
Typical Rise Time (ns)
|
23 |
Typical Turn-Off Delay Time (ns)
|
21 |
Typical Turn-On Delay Time (ns)
|
15 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
25 |
Typical Diode Forward Voltage (V)
|
0.75 |
Typical Gate Plateau Voltage (V)
|
3.9 |
Typical Reverse Recovery Time (ns)
|
59 |
Maximum Diode Forward Voltage (V)
|
1.1 |
Minimum Gate Resistance (Ohm)
|
0.2 |
Maximum Gate Resistance (Ohm)
|
1.3 |
Maximum Positive Gate Source Voltage (V)
|
20 |
Original Package
|
PowerPAK SO EP |
Pin Count
|
8 |
Standard Package Method
|
SOP |
Terminal Form
|
Surface Mount |
Package Height
|
1.07(Max) |
Package Length
|
4.9 |
Package Width
|
5.89 |
PCB changed
|
8 |