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    SIR182DP-T1-RE3

    SKU: 127484
    Manufacturer: Vishay
    Trans MOSFET N-CH 60V 117A 8-Pin PowerPAK SO EP T/R
    3610 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.6
    Maximum Continuous Drain Current (A) 117
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.8@10V
    Typical Gate Charge @ Vgs (nC) 42.2@10V
    Typical Gate Charge @ 10V (nC) 42.2
    Typical Gate to Drain Charge (nC) 6.7
    Typical Gate to Source Charge (nC) 12.2
    Typical Reverse Recovery Charge (nC) 71
    Typical Input Capacitance @ Vds (pF) 3250@30V
    Typical Reverse Transfer Capacitance @ Vds (pF) 50@30V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 840
    Maximum Power Dissipation (mW) 5000
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 21
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 25
    Typical Diode Forward Voltage (V) 0.75
    Typical Gate Plateau Voltage (V) 3.9
    Typical Reverse Recovery Time (ns) 59
    Maximum Diode Forward Voltage (V) 1.1
    Minimum Gate Resistance (Ohm) 0.2
    Maximum Gate Resistance (Ohm) 1.3
    Maximum Positive Gate Source Voltage (V) 20
    Original Package PowerPAK SO EP
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.07(Max)
    Package Length 4.9
    Package Width 5.89
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.6
    Maximum Continuous Drain Current (A) 117
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.8@10V
    Typical Gate Charge @ Vgs (nC) 42.2@10V
    Typical Gate Charge @ 10V (nC) 42.2
    Typical Gate to Drain Charge (nC) 6.7
    Typical Gate to Source Charge (nC) 12.2
    Typical Reverse Recovery Charge (nC) 71
    Typical Input Capacitance @ Vds (pF) 3250@30V
    Typical Reverse Transfer Capacitance @ Vds (pF) 50@30V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 840
    Maximum Power Dissipation (mW) 5000
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 21
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 25
    Typical Diode Forward Voltage (V) 0.75
    Typical Gate Plateau Voltage (V) 3.9
    Typical Reverse Recovery Time (ns) 59
    Maximum Diode Forward Voltage (V) 1.1
    Minimum Gate Resistance (Ohm) 0.2
    Maximum Gate Resistance (Ohm) 1.3
    Maximum Positive Gate Source Voltage (V) 20
    Original Package PowerPAK SO EP
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.07(Max)
    Package Length 4.9
    Package Width 5.89
    PCB changed 8