EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single Dual Drain Triple Source |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
12 |
Maximum Gate Source Voltage (V)
|
±8 |
Maximum Continuous Drain Current (A)
|
14.5 |
Maximum Drain Source Resistance (mOhm)
|
21@4.5V |
Typical Gate Charge @ Vgs (nC)
|
38@5V |
Typical Input Capacitance @ Vds (pF)
|
2220@6V |
Maximum Power Dissipation (mW)
|
2900 |
Typical Fall Time (ns)
|
240 |
Typical Rise Time (ns)
|
25 |
Typical Turn-Off Delay Time (ns)
|
380 |
Typical Turn-On Delay Time (ns)
|
14 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
Micro Foot |
Pin Count
|
6 |
Standard Package Method
|
BGA |
Terminal Form
|
Surface Mount |
Package Height
|
0.36(Max) |
Package Length
|
2.4(Max) |
Package Width
|
2(Max) |
PCB changed
|
6 |