EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Dual Drain |
Process Technology
|
TrenchFET |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
12 |
Maximum Gate Source Voltage (V)
|
±8 |
Maximum Gate Threshold Voltage (V)
|
1 |
Maximum Continuous Drain Current (A)
|
5.3 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
37@4.5V |
Typical Gate Charge @ Vgs (nC)
|
19@4.5V |
Maximum Power Dissipation (mW)
|
1470 |
Typical Fall Time (ns)
|
115 |
Typical Rise Time (ns)
|
32 |
Typical Turn-Off Delay Time (ns)
|
180 |
Typical Turn-On Delay Time (ns)
|
15 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
Micro Foot |
Pin Count
|
4 |
Standard Package Method
|
BGA |
Terminal Form
|
Surface Mount |
Package Height
|
0.36(Max) |
Package Length
|
1.6(Max) |
Package Width
|
1.6(Max) |