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    2N7002K-T1-GE3

    SKU: 7422
    Manufacturer: Vishay
    Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
    636630 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 0.3
    Maximum Gate Source Leakage Current (nA) 150
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2000@10V
    Typical Gate Charge @ Vgs (nC) 0.4@4.5V
    Typical Gate Charge @ 10V (nC) 0.4
    Typical Input Capacitance @ Vds (pF) 30@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 2.5@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 6
    Maximum Power Dissipation (mW) 350
    Typical Turn-Off Delay Time (ns) 35(Max)
    Typical Turn-On Delay Time (ns) 25(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 0.3
    Maximum Power Dissipation on PCB @ TC=25°C (W) 0.35
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.8
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 350
    Typical Gate Plateau Voltage (V) 3.1
    Maximum Diode Forward Voltage (V) 1.3
    Pin Count 3
    Standard Package Method SOT
    Original Package SOT-23
    Terminal Form Surface Mount
    Package Height 1.02(Max)
    Package Length 3.04(Max)
    Package Width 1.4(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 0.3
    Maximum Gate Source Leakage Current (nA) 150
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2000@10V
    Typical Gate Charge @ Vgs (nC) 0.4@4.5V
    Typical Gate Charge @ 10V (nC) 0.4
    Typical Input Capacitance @ Vds (pF) 30@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 2.5@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 6
    Maximum Power Dissipation (mW) 350
    Typical Turn-Off Delay Time (ns) 35(Max)
    Typical Turn-On Delay Time (ns) 25(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 0.3
    Maximum Power Dissipation on PCB @ TC=25°C (W) 0.35
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.8
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 350
    Typical Gate Plateau Voltage (V) 3.1
    Maximum Diode Forward Voltage (V) 1.3
    Pin Count 3
    Standard Package Method SOT
    Original Package SOT-23
    Terminal Form Surface Mount
    Package Height 1.02(Max)
    Package Length 3.04(Max)
    Package Width 1.4(Max)
    PCB changed 3