|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single Quad Drain Triple Source |
|
Process Technology
|
U-MOS VIII-H |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
30 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Gate Threshold Voltage (V)
|
2.3 |
|
Maximum Continuous Drain Current (A)
|
220 |
|
Maximum Gate Source Leakage Current (nA)
|
100 |
|
Maximum IDSS (uA)
|
10 |
|
Maximum Drain Source Resistance (mOhm)
|
0.9@10V |
|
Typical Gate Charge @ Vgs (nC)
|
74@10V |
|
Typical Gate Charge @ 10V (nC)
|
74 |
|
Typical Input Capacitance @ Vds (pF)
|
5300@15V |
|
Maximum Power Dissipation (mW)
|
78000 |
|
Typical Fall Time (ns)
|
15 |
|
Typical Rise Time (ns)
|
9.6 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tape and Reel |
|
Original Package
|
SOP Advance |
|
Pin Count
|
8 |
|
Standard Package Method
|
SOP |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
0.95 |
|
Package Length
|
5 |
|
Package Width
|
5 |
|
PCB changed
|
8 |