EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single |
Process Technology
|
U-MOS VIII-H |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
120 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
4 |
Maximum Continuous Drain Current (A)
|
179 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
10 |
Maximum Drain Source Resistance (mOhm)
|
4.4@10V |
Typical Gate Charge @ Vgs (nC)
|
130@10V |
Typical Gate Charge @ 10V (nC)
|
130 |
Typical Input Capacitance @ Vds (pF)
|
8100@60V |
Maximum Power Dissipation (mW)
|
255000 |
Typical Fall Time (ns)
|
37 |
Typical Rise Time (ns)
|
33 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Magazine |
Original Package
|
TO-220 |
Pin Count
|
3 |
Standard Package Method
|
TO-220 |
Terminal Form
|
Through Hole |
Package Height
|
8.59 |
Package Length
|
10.16 |
Package Width
|
4.45 |
PCB changed
|
3 |
Tab
|
Tab |