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    TK72E08N1

    SKU: 99833
    Manufacturer: Toshiba
    Trans MOSFET N-CH Si 80V 157A 3-Pin(3+Tab) TO-220 Magazine
    6650 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology U-MOS VIII-H
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 80
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 157
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 4.3@10V
    Typical Gate Charge @ Vgs (nC) 81@10V
    Typical Gate Charge @ 10V (nC) 81
    Typical Input Capacitance @ Vds (pF) 5500@40V
    Maximum Power Dissipation (mW) 192000
    Typical Fall Time (ns) 28
    Typical Rise Time (ns) 19
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Magazine
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 8.59
    Package Length 10.16
    Package Width 4.45
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology U-MOS VIII-H
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 80
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 157
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 4.3@10V
    Typical Gate Charge @ Vgs (nC) 81@10V
    Typical Gate Charge @ 10V (nC) 81
    Typical Input Capacitance @ Vds (pF) 5500@40V
    Maximum Power Dissipation (mW) 192000
    Typical Fall Time (ns) 28
    Typical Rise Time (ns) 19
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Magazine
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 8.59
    Package Length 10.16
    Package Width 4.45
    PCB changed 3
    Tab Tab