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    TK100E10NE

    SKU: 29159
    Manufacturer: Toshiba
    Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220AB Tube
    1550 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Supplier Unconfirmed
    ECCN (US) EAR99
    Part Status Unconfirmed
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology U-MOS VIII-H
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 100
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 5.1@10V
    Typical Gate Charge @ Vgs (nC) 83@10V
    Typical Gate Charge @ 10V (nC) 83
    Typical Input Capacitance @ Vds (pF) 5590@10V
    Maximum Power Dissipation (mW) 230000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-220AB
    Pin Count 3
    Terminal Form Through Hole
    Package Length 10.3(Max)
    Package Width 4.7(Max)
    PCB changed 3
    Products specifications
    EU RoHS Supplier Unconfirmed
    ECCN (US) EAR99
    Part Status Unconfirmed
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology U-MOS VIII-H
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 100
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 5.1@10V
    Typical Gate Charge @ Vgs (nC) 83@10V
    Typical Gate Charge @ 10V (nC) 83
    Typical Input Capacitance @ Vds (pF) 5590@10V
    Maximum Power Dissipation (mW) 230000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-220AB
    Pin Count 3
    Terminal Form Through Hole
    Package Length 10.3(Max)
    Package Width 4.7(Max)
    PCB changed 3