2SK241-GR

SKU: 157247

Manufacturer: Toshiba

Trans RF FET N-CH 20V 0.03A 3-Pin 2-4E1D

2470 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Body Material	Si
Configuration	Single
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±5
Maximum Continuous Drain Current (A)	0.03
Maximum Gate Source Leakage Current (nA)	50
Maximum IDSS (uA)	14000
Typical Input Capacitance @ Vds (pF)	3@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.035@10V
Typical Forward Transconductance (S)	0.01
Maximum Power Dissipation (mW)	200
Typical Power Gain (dB)	28
Operating Temperature-Min	-55
Operating Temperature-Max	125
Original Package	2-4E1D
Pin Count	3
Terminal Form	Through Hole
Package Height	3.2(Max)
Package Length	4.2(Max)
Package Width	2.6(Max)

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Body Material	Si
Configuration	Single
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±5
Maximum Continuous Drain Current (A)	0.03
Maximum Gate Source Leakage Current (nA)	50
Maximum IDSS (uA)	14000
Typical Input Capacitance @ Vds (pF)	3@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.035@10V
Typical Forward Transconductance (S)	0.01
Maximum Power Dissipation (mW)	200
Typical Power Gain (dB)	28
Operating Temperature-Min	-55
Operating Temperature-Max	125
Original Package	2-4E1D
Pin Count	3
Terminal Form	Through Hole
Package Height	3.2(Max)
Package Length	4.2(Max)
Package Width	2.6(Max)