2SK2381

SKU: 116205

Manufacturer: Toshiba

Trans MOSFET N-CH Si 200V 5A 3-Pin(3+Tab) TO-220NIS

2380 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	5
Maximum Drain Source Resistance (mOhm)	800@10V
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate Charge @ 10V (nC)	10
Typical Input Capacitance @ Vds (pF)	440@10V
Maximum Power Dissipation (mW)	25000
Typical Fall Time (ns)	15
Typical Rise Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220NIS
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	15
Package Length	10
Package Width	4.5
PCB changed	3
Tab	Tab

Your name

Your email

Enquiry

Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	5
Maximum Drain Source Resistance (mOhm)	800@10V
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate Charge @ 10V (nC)	10
Typical Input Capacitance @ Vds (pF)	440@10V
Maximum Power Dissipation (mW)	25000
Typical Fall Time (ns)	15
Typical Rise Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220NIS
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	15
Package Length	10
Package Width	4.5
PCB changed	3
Tab	Tab