EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
LTB |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
5 |
Maximum Drain Source Resistance (mOhm)
|
160@10V |
Typical Gate Charge @ Vgs (nC)
|
12@10V |
Typical Gate Charge @ 10V (nC)
|
12 |
Typical Input Capacitance @ Vds (pF)
|
370@10V |
Maximum Power Dissipation (mW)
|
20000 |
Typical Fall Time (ns)
|
55 |
Typical Rise Time (ns)
|
18 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
New PW-Mold |
Pin Count
|
3 |
Standard Package Method
|
TO-251 |
Terminal Form
|
Surface Mount |
Package Height
|
2.3 |
Package Length
|
6.5 |
Package Width
|
5.5 |
PCB changed
|
2 |
Tab
|
Tab |