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    2SJ168

    SKU: 8089
    Manufacturer: Toshiba
    Trans MOSFET P-CH Si 60V 0.2A 3-Pin S-Mini T/R
    45640 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive No
    PPAP No
    Product Category Small Signal
    Body Material Si
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.5
    Operating Junction Temperature (°C) 150
    Maximum Continuous Drain Current (A) 0.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 2000@10V
    Typical Input Capacitance @ Vds (pF) 73@10V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@10V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 48
    Maximum Power Dissipation (mW) 200
    Typical Fall Time (ns) 35
    Typical Rise Time (ns) 8
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.8
    Original Package S-Mini
    Pin Count 3
    Standard Package Method S-MINI
    Terminal Form Surface Mount
    Package Height 1.1
    Package Length 2.9
    Package Width 1.5
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive No
    PPAP No
    Product Category Small Signal
    Body Material Si
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.5
    Operating Junction Temperature (°C) 150
    Maximum Continuous Drain Current (A) 0.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 2000@10V
    Typical Input Capacitance @ Vds (pF) 73@10V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@10V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 48
    Maximum Power Dissipation (mW) 200
    Typical Fall Time (ns) 35
    Typical Rise Time (ns) 8
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.8
    Original Package S-Mini
    Pin Count 3
    Standard Package Method S-MINI
    Terminal Form Surface Mount
    Package Height 1.1
    Package Length 2.9
    Package Width 1.5
    PCB changed 3