2SJ268-DL-E

SKU: 7956

Manufacturer: onsemi

Trans MOSFET P-CH 60V 18A

3730 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±15
Maximum Continuous Drain Current (A)	18
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	80@10V
Typical Input Capacitance @ Vds (pF)	1900@20V
Maximum Power Dissipation (mW)	1650
Typical Fall Time (ns)	250
Typical Rise Time (ns)	35
Typical Turn-Off Delay Time (ns)	350
Typical Turn-On Delay Time (ns)	18
Operating Temperature-Min	-55

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Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±15
Maximum Continuous Drain Current (A)	18
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	80@10V
Typical Input Capacitance @ Vds (pF)	1900@20V
Maximum Power Dissipation (mW)	1650
Typical Fall Time (ns)	250
Typical Rise Time (ns)	35
Typical Turn-Off Delay Time (ns)	350
Typical Turn-On Delay Time (ns)	18
Operating Temperature-Min	-55