EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Quad Drain Triple Source |
Process Technology
|
NexFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
25 |
Maximum Gate Source Voltage (V)
|
10 |
Maximum Gate Threshold Voltage (V)
|
1.4 |
Maximum Continuous Drain Current (A)
|
21 |
Maximum Drain Source Resistance (mOhm)
|
5@8V |
Typical Gate Charge @ Vgs (nC)
|
6.8@4.5V |
Typical Gate to Drain Charge (nC)
|
1.3 |
Typical Gate to Source Charge (nC)
|
2.4 |
Typical Reverse Recovery Charge (nC)
|
19 |
Typical Input Capacitance @ Vds (pF)
|
1050@12.5V |
Typical Output Capacitance (pF)
|
740 |
Maximum Power Dissipation (mW)
|
3100 |
Typical Fall Time (ns)
|
3.7 |
Typical Rise Time (ns)
|
10.7 |
Typical Turn-Off Delay Time (ns)
|
12.3 |
Typical Turn-On Delay Time (ns)
|
6.1 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Pin Count
|
8 |
Standard Package Method
|
SON |
Original Package
|
VSON-CLIP EP |
Terminal Form
|
Surface Mount |
Package Height
|
1 |
Package Length
|
5 |
Package Width
|
6 |
PCB changed
|
8 |