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    CSD13385F5

    SKU: 86765
    Manufacturer: Texas Instruments
    Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R
    1960 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology FemtoFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) 8
    Maximum Gate Threshold Voltage (V) 1.2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 7.1
    Maximum Gate Source Leakage Current (nA) 25
    Maximum IDSS (uA) 0.05
    Maximum Drain Source Resistance (mOhm) 19@4.5V
    Typical Gate Charge @ Vgs (nC) 3.9@4.5V
    Typical Gate to Drain Charge (nC) 0.39
    Typical Gate to Source Charge (nC) 0.74
    Typical Input Capacitance @ Vds (pF) 519@6V
    Typical Reverse Transfer Capacitance @ Vds (pF) 29@6V
    Minimum Gate Threshold Voltage (V) 0.5
    Typical Output Capacitance (pF) 305
    Maximum Power Dissipation (mW) 1400
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 33
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Pulsed Drain Current @ TC=25°C (A) 41
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 245(Typ)
    Typical Diode Forward Voltage (V) 0.67
    Typical Gate Plateau Voltage (V) 1.2
    Maximum Diode Forward Voltage (V) 1
    Typical Gate Threshold Voltage (V) 0.8
    Maximum Positive Gate Source Voltage (V) 8
    Original Package PicoStar
    Pin Count 3
    Terminal Form Surface Mount
    Package Height 0.35(Max)
    Package Length 1.53(Max)
    Package Width 0.77(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology FemtoFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) 8
    Maximum Gate Threshold Voltage (V) 1.2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 7.1
    Maximum Gate Source Leakage Current (nA) 25
    Maximum IDSS (uA) 0.05
    Maximum Drain Source Resistance (mOhm) 19@4.5V
    Typical Gate Charge @ Vgs (nC) 3.9@4.5V
    Typical Gate to Drain Charge (nC) 0.39
    Typical Gate to Source Charge (nC) 0.74
    Typical Input Capacitance @ Vds (pF) 519@6V
    Typical Reverse Transfer Capacitance @ Vds (pF) 29@6V
    Minimum Gate Threshold Voltage (V) 0.5
    Typical Output Capacitance (pF) 305
    Maximum Power Dissipation (mW) 1400
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 33
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Pulsed Drain Current @ TC=25°C (A) 41
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 245(Typ)
    Typical Diode Forward Voltage (V) 0.67
    Typical Gate Plateau Voltage (V) 1.2
    Maximum Diode Forward Voltage (V) 1
    Typical Gate Threshold Voltage (V) 0.8
    Maximum Positive Gate Source Voltage (V) 8
    Original Package PicoStar
    Pin Count 3
    Terminal Form Surface Mount
    Package Height 0.35(Max)
    Package Length 1.53(Max)
    Package Width 0.77(Max)
    PCB changed 3