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    STY145N65M5

    SKU: 106749
    Manufacturer: STMicroelectronics
    Trans MOSFET N-CH Si 650V 138A 3-Pin(3+Tab) Max247 Tube
    290 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology MDmesh
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 138
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 15@10V
    Typical Gate Charge @ Vgs (nC) 414@10V
    Typical Gate Charge @ 10V (nC) 414
    Typical Input Capacitance @ Vds (pF) 18500@100V
    Maximum Power Dissipation (mW) 625000
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package Max247
    Pin Count 3
    Terminal Form Through Hole
    Package Height 19.7
    Package Length 15.3
    Package Width 4.7
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology MDmesh
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 138
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 15@10V
    Typical Gate Charge @ Vgs (nC) 414@10V
    Typical Gate Charge @ 10V (nC) 414
    Typical Input Capacitance @ Vds (pF) 18500@100V
    Maximum Power Dissipation (mW) 625000
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package Max247
    Pin Count 3
    Terminal Form Through Hole
    Package Height 19.7
    Package Length 15.3
    Package Width 4.7
    PCB changed 3
    Tab Tab