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    STW56N65M2

    SKU: 43225
    Manufacturer: STMicroelectronics
    STW56N65M2 STMicroelectronics MOSFETs Transistor N-CH 650V 49A 3-Pin(3+Tab) TO-247 Tube - Arrow.com
    3920 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology MDmesh M2
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 49
    Maximum Gate Source Leakage Current (nA) 10
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 62@10V
    Typical Gate Charge @ Vgs (nC) 93@10V
    Typical Gate Charge @ 10V (nC) 93
    Typical Input Capacitance @ Vds (pF) 3900@100V
    Maximum Power Dissipation (mW) 358000
    Typical Fall Time (ns) 13
    Typical Rise Time (ns) 27.5
    Typical Turn-Off Delay Time (ns) 146
    Typical Turn-On Delay Time (ns) 19
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 49
    Typical Gate Threshold Voltage (V) 10
    Original Package TO-247
    Pin Count 3
    Standard Package Method TO-247
    Terminal Form Through Hole
    Package Height 20.15(Max)
    Package Length 15.75(Max)
    Package Width 5.15(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology MDmesh M2
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 49
    Maximum Gate Source Leakage Current (nA) 10
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 62@10V
    Typical Gate Charge @ Vgs (nC) 93@10V
    Typical Gate Charge @ 10V (nC) 93
    Typical Input Capacitance @ Vds (pF) 3900@100V
    Maximum Power Dissipation (mW) 358000
    Typical Fall Time (ns) 13
    Typical Rise Time (ns) 27.5
    Typical Turn-Off Delay Time (ns) 146
    Typical Turn-On Delay Time (ns) 19
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 49
    Typical Gate Threshold Voltage (V) 10
    Original Package TO-247
    Pin Count 3
    Standard Package Method TO-247
    Terminal Form Through Hole
    Package Height 20.15(Max)
    Package Length 15.75(Max)
    Package Width 5.15(Max)
    PCB changed 3
    Tab Tab