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    K4B4G0846E-BCNB

    SKU: 33293
    Manufacturer: Samsung Electronics
    DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.5V 78-Pin FBGA
    2030 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8542.32.00.36
    Automotive No
    PPAP No
    DRAM Type DDR3 SDRAM
    Chip Density (bit) 4G
    Organization 512Mx8
    Number of Internal Banks 8
    Number of Words per Bank 64M
    Number of Bits/Word (bit) 8
    Data Bus Width (bit) 8
    Maximum Clock Rate (MHz) 2133
    Address Bus Width (bit) 19
    Operating Supply Voltage-Min (V) 1.425
    Typical Operating Supply Voltage (V) 1.5
    Operating Supply Voltage-Max (V) 1.575
    Operating Current (mA) 95
    Operating Temperature-Min 0
    Operating Temperature-Max 95
    Supplier Temperature Grade Extended
    Number of I/O Lines (bit) 8
    Original Package FBGA
    Pin Count 78
    Standard Package Method BGA
    Terminal Form Surface Mount
    Package Length 11
    Package Width 7.5
    PCB changed 78
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8542.32.00.36
    Automotive No
    PPAP No
    DRAM Type DDR3 SDRAM
    Chip Density (bit) 4G
    Organization 512Mx8
    Number of Internal Banks 8
    Number of Words per Bank 64M
    Number of Bits/Word (bit) 8
    Data Bus Width (bit) 8
    Maximum Clock Rate (MHz) 2133
    Address Bus Width (bit) 19
    Operating Supply Voltage-Min (V) 1.425
    Typical Operating Supply Voltage (V) 1.5
    Operating Supply Voltage-Max (V) 1.575
    Operating Current (mA) 95
    Operating Temperature-Min 0
    Operating Temperature-Max 95
    Supplier Temperature Grade Extended
    Number of I/O Lines (bit) 8
    Original Package FBGA
    Pin Count 78
    Standard Package Method BGA
    Terminal Form Surface Mount
    Package Length 11
    Package Width 7.5
    PCB changed 78