K4B4G0846D-BYK0

SKU: 19200

Manufacturer: Samsung Electronics

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin FBGA

260 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
DRAM Type	DDR3L SDRAM
Chip Density (bit)	4G
Organization	512Mx8
Number of Internal Banks	8
Number of Words per Bank	64M
Number of Bits/Word (bit)	8
Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	1600
Maximum Access Time (ns)	0.225
Address Bus Width (bit)	19
Operating Supply Voltage-Min (V)	1.283
Typical Operating Supply Voltage (V)	1.35
Operating Supply Voltage-Max (V)	1.45
Operating Current (mA)	68
Operating Temperature-Min	0
Operating Temperature-Max	95
Supplier Temperature Grade	Commercial
Number of I/O Lines (bit)	8
Original Package	FBGA
Pin Count	78
Terminal Form	Surface Mount
Package Length	11
Package Width	7.5

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
DRAM Type	DDR3L SDRAM
Chip Density (bit)	4G
Organization	512Mx8
Number of Internal Banks	8
Number of Words per Bank	64M
Number of Bits/Word (bit)	8
Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	1600
Maximum Access Time (ns)	0.225
Address Bus Width (bit)	19
Operating Supply Voltage-Min (V)	1.283
Typical Operating Supply Voltage (V)	1.35
Operating Supply Voltage-Max (V)	1.45
Operating Current (mA)	68
Operating Temperature-Min	0
Operating Temperature-Max	95
Supplier Temperature Grade	Commercial
Number of I/O Lines (bit)	8
Original Package	FBGA
Pin Count	78
Terminal Form	Surface Mount
Package Length	11
Package Width	7.5