EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Dual Dual Drain |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.6 |
Maximum Continuous Drain Current (A)
|
3@N Channel |
Maximum Gate Source Leakage Current (nA)
|
10000 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
80@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
10@10V@N Channel |
Typical Gate Charge @ 10V (nC)
|
10@N Channel |
Typical Input Capacitance @ Vds (pF)
|
505@20V@N Channel |
Maximum Power Dissipation (mW)
|
1000 |
Typical Fall Time (ns)
|
22@N Channel |
Typical Rise Time (ns)
|
7.5@N Channel |
Typical Turn-Off Delay Time (ns)
|
41@N Channel |
Typical Turn-On Delay Time (ns)
|
7.3@N Channel |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
SOT-28FL |
Pin Count
|
8 |
Terminal Form
|
Surface Mount |
Package Height
|
0.78(Max) |
Package Length
|
2.9 |
Package Width
|
2.3 |