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    VEC2610-TL-E

    SKU: 45516
    Manufacturer: onsemi
    Trans MOSFET N/P-CH Si 20V 4.5A/3A 8-Pin Case VEC T/R
    16140 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±10
    Maximum Continuous Drain Current (A) 4.5@N Channel
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 42@4V@N Channel
    Typical Gate Charge @ Vgs (nC) 8.2@4.5V@P Channel
    Typical Input Capacitance @ Vds (pF) 570@10V@N Channel
    Maximum Power Dissipation (mW) 1000
    Typical Fall Time (ns) 52@N Channel
    Typical Rise Time (ns) 105@N Channel
    Typical Turn-Off Delay Time (ns) 50@N Channel
    Typical Turn-On Delay Time (ns) 15@N Channel
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package Case VEC
    Pin Count 8
    Terminal Form Surface Mount
    Package Height 0.78(Max)
    Package Length 2.9
    Package Width 2.3
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±10
    Maximum Continuous Drain Current (A) 4.5@N Channel
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 42@4V@N Channel
    Typical Gate Charge @ Vgs (nC) 8.2@4.5V@P Channel
    Typical Input Capacitance @ Vds (pF) 570@10V@N Channel
    Maximum Power Dissipation (mW) 1000
    Typical Fall Time (ns) 52@N Channel
    Typical Rise Time (ns) 105@N Channel
    Typical Turn-Off Delay Time (ns) 50@N Channel
    Typical Turn-On Delay Time (ns) 15@N Channel
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package Case VEC
    Pin Count 8
    Terminal Form Surface Mount
    Package Height 0.78(Max)
    Package Length 2.9
    Package Width 2.3