FDN5632N-F085

SKU: 153365

Manufacturer: onsemi

Trans MOSFET N-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R

2110 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	Yes
PPAP	Yes
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	1.7
Maximum Drain Source Resistance (mOhm)	82@10V
Typical Gate Charge @ Vgs (nC)	9.2@10V
Typical Gate Charge @ 10V (nC)	9.2
Typical Input Capacitance @ Vds (pF)	475@15V
Maximum Power Dissipation (mW)	1100
Typical Fall Time (ns)	1.3
Typical Rise Time (ns)	1.7
Typical Turn-Off Delay Time (ns)	5.2
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Pin Count	3
Standard Package Method	SOT
Original Package	SOT-23
Terminal Form	Surface Mount
Package Height	0.94
Package Length	2.92
Package Width	1.4
PCB changed	3

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	Yes
PPAP	Yes
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	1.7
Maximum Drain Source Resistance (mOhm)	82@10V
Typical Gate Charge @ Vgs (nC)	9.2@10V
Typical Gate Charge @ 10V (nC)	9.2
Typical Input Capacitance @ Vds (pF)	475@15V
Maximum Power Dissipation (mW)	1100
Typical Fall Time (ns)	1.3
Typical Rise Time (ns)	1.7
Typical Turn-Off Delay Time (ns)	5.2
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Pin Count	3
Standard Package Method	SOT
Original Package	SOT-23
Terminal Form	Surface Mount
Package Height	0.94
Package Length	2.92
Package Width	1.4
PCB changed	3