EFC6602R-A-TR

SKU: 117715

Manufacturer: onsemi

Trans MOSFET N-CH Si 18A T/R

3870 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Dual Dual Source Common Drain
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	2
Maximum Gate Source Voltage (V)	±12
Maximum Continuous Drain Current (A)	18
Maximum Gate Source Leakage Current (nA)	1000
Maximum Drain Source Resistance (mOhm)	5.9@4.5V
Typical Gate Charge @ Vgs (nC)	55@4.5V
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	5500
Typical Rise Time (ns)	2100
Typical Turn-Off Delay Time (ns)	6200
Typical Turn-On Delay Time (ns)	530
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Dual Dual Source Common Drain
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	2
Maximum Gate Source Voltage (V)	±12
Maximum Continuous Drain Current (A)	18
Maximum Gate Source Leakage Current (nA)	1000
Maximum Drain Source Resistance (mOhm)	5.9@4.5V
Typical Gate Charge @ Vgs (nC)	55@4.5V
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	5500
Typical Rise Time (ns)	2100
Typical Turn-Off Delay Time (ns)	6200
Typical Turn-On Delay Time (ns)	530
Operating Temperature-Min	-55
Operating Temperature-Max	150