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    2SK4177-DL-1E

    SKU: 65195
    Manufacturer: onsemi
    Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) D2PAK T/R
    210 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status LTB
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 1500
    Maximum Gate Source Voltage (V) ±20
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 13000@10V
    Typical Gate Charge @ Vgs (nC) 37.5@10V
    Typical Gate Charge @ 10V (nC) 37.5
    Typical Gate to Drain Charge (nC) 20
    Typical Gate to Source Charge (nC) 2.7
    Typical Input Capacitance @ Vds (pF) 380@30V
    Typical Reverse Transfer Capacitance @ Vds (pF) 40@30V
    Typical Output Capacitance (pF) 70
    Maximum Power Dissipation (mW) 80000
    Typical Fall Time (ns) 59
    Typical Rise Time (ns) 37
    Typical Turn-Off Delay Time (ns) 152
    Typical Turn-On Delay Time (ns) 12
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 4
    Typical Diode Forward Voltage (V) 0.88
    Typical Gate Plateau Voltage (V) 5.3
    Maximum Diode Forward Voltage (V) 1.2
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.5
    Package Length 10
    Package Width 9.2
    PCB changed 2
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status LTB
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 1500
    Maximum Gate Source Voltage (V) ±20
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 13000@10V
    Typical Gate Charge @ Vgs (nC) 37.5@10V
    Typical Gate Charge @ 10V (nC) 37.5
    Typical Gate to Drain Charge (nC) 20
    Typical Gate to Source Charge (nC) 2.7
    Typical Input Capacitance @ Vds (pF) 380@30V
    Typical Reverse Transfer Capacitance @ Vds (pF) 40@30V
    Typical Output Capacitance (pF) 70
    Maximum Power Dissipation (mW) 80000
    Typical Fall Time (ns) 59
    Typical Rise Time (ns) 37
    Typical Turn-Off Delay Time (ns) 152
    Typical Turn-On Delay Time (ns) 12
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 4
    Typical Diode Forward Voltage (V) 0.88
    Typical Gate Plateau Voltage (V) 5.3
    Maximum Diode Forward Voltage (V) 1.2
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.5
    Package Length 10
    Package Width 9.2
    PCB changed 2
    Tab Tab