2SK4177-DL-1E

SKU: 65195

Manufacturer: onsemi

Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) D2PAK T/R

210 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1500
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	13000@10V
Typical Gate Charge @ Vgs (nC)	37.5@10V
Typical Gate Charge @ 10V (nC)	37.5
Typical Gate to Drain Charge (nC)	20
Typical Gate to Source Charge (nC)	2.7
Typical Input Capacitance @ Vds (pF)	380@30V
Typical Reverse Transfer Capacitance @ Vds (pF)	40@30V
Typical Output Capacitance (pF)	70
Maximum Power Dissipation (mW)	80000
Typical Fall Time (ns)	59
Typical Rise Time (ns)	37
Typical Turn-Off Delay Time (ns)	152
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	4
Typical Diode Forward Voltage (V)	0.88
Typical Gate Plateau Voltage (V)	5.3
Maximum Diode Forward Voltage (V)	1.2
Pin Count	3
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.5
Package Length	10
Package Width	9.2
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1500
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	13000@10V
Typical Gate Charge @ Vgs (nC)	37.5@10V
Typical Gate Charge @ 10V (nC)	37.5
Typical Gate to Drain Charge (nC)	20
Typical Gate to Source Charge (nC)	2.7
Typical Input Capacitance @ Vds (pF)	380@30V
Typical Reverse Transfer Capacitance @ Vds (pF)	40@30V
Typical Output Capacitance (pF)	70
Maximum Power Dissipation (mW)	80000
Typical Fall Time (ns)	59
Typical Rise Time (ns)	37
Typical Turn-Off Delay Time (ns)	152
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	4
Typical Diode Forward Voltage (V)	0.88
Typical Gate Plateau Voltage (V)	5.3
Maximum Diode Forward Voltage (V)	1.2
Pin Count	3
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.5
Package Length	10
Package Width	9.2
PCB changed	2
Tab	Tab