EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Mode of Operation
|
Pulsed RF |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum VSWR
|
5 |
Maximum Continuous Drain Current (A)
|
33 |
Maximum Drain Source Resistance (mOhm)
|
135@6.15V |
Typical Forward Transconductance (S)
|
13 |
Output Power (W)
|
130(Typ) |
Typical Power Gain (dB)
|
12 |
Maximum Frequency (MHz)
|
3100 |
Minimum Frequency (MHz)
|
2700 |
Typical Fall Time (ns)
|
6 |
Typical Rise Time (ns)
|
20 |
Typical Drain Efficiency (%)
|
47 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
200 |
Original Package
|
CDFM |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
4.22(Max) |
Package Length
|
17.75(Max) |
Package Width
|
9.53(Max) |