|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
NRND |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Mode of Operation
|
Pulsed RF |
|
Process Technology
|
LDMOS |
|
Maximum Drain Source Voltage (V)
|
60 |
|
Maximum Gate Source Voltage (V)
|
13 |
|
Maximum VSWR
|
5 |
|
Maximum Continuous Drain Current (A)
|
33 |
|
Maximum Drain Source Resistance (mOhm)
|
135@6.15V |
|
Typical Forward Transconductance (S)
|
13 |
|
Output Power (W)
|
130(Typ) |
|
Typical Power Gain (dB)
|
12 |
|
Maximum Frequency (MHz)
|
3100 |
|
Minimum Frequency (MHz)
|
2700 |
|
Typical Fall Time (ns)
|
6 |
|
Typical Rise Time (ns)
|
20 |
|
Typical Drain Efficiency (%)
|
47 |
|
Operating Temperature-Min
|
-65 |
|
Operating Temperature-Max
|
200 |
|
Original Package
|
CDFM |
|
Pin Count
|
3 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
4.22(Max) |
|
Package Length
|
17.75(Max) |
|
Package Width
|
9.53(Max) |