EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
LTB |
Configuration
|
Single Dual Drain Dual Gate |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Mode of Operation
|
Pulsed CW |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
65 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum Gate Threshold Voltage (V)
|
2.3 |
Maximum VSWR
|
10 |
Maximum Gate Source Leakage Current (nA)
|
140 |
Maximum IDSS (uA)
|
1.4 |
Maximum Drain Source Resistance (mOhm)
|
2000(Typ)@3.75V |
Typical Forward Transconductance (S)
|
0.08 |
Output Power (W)
|
5 |
Typical Power Gain (dB)
|
18 |
Maximum Frequency (MHz)
|
2700 |
Minimum Frequency (MHz)
|
700 |
Typical Drain Efficiency (%)
|
17 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
225 |
Original Package
|
HVSON EP |
Pin Count
|
16 |
Terminal Form
|
Surface Mount |
Package Height
|
0.82 |
Package Length
|
6 |
Package Width
|
4 |