EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
Automotive
|
Unknown |
PPAP
|
Unknown |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Mode of Operation
|
Pulsed RF |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
100 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum Gate Threshold Voltage (V)
|
2.4 |
Maximum VSWR
|
10 |
Maximum Continuous Drain Current (A)
|
2.5 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
2750@3.75V |
Typical Forward Transconductance (S)
|
0.15 |
Output Power (W)
|
25(Min) |
Typical Power Gain (dB)
|
21 |
Maximum Frequency (MHz)
|
1400 |
Minimum Frequency (MHz)
|
500 |
Typical Fall Time (ns)
|
6 |
Typical Rise Time (ns)
|
20 |
Typical Drain Efficiency (%)
|
59 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
200 |
Original Package
|
LDMOST |
Pin Count
|
3 |
Terminal Form
|
Screw |
Package Height
|
4.67(Max) |
Package Length
|
20.45(Max) |
Package Width
|
5.97(Max) |